Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1998-08-04

2000-10-17

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257582, 257197, 257559, 257586, H01L 29737

Patent

active

061335940

ABSTRACT:
A compound semiconductor device having a mesa type heterojunction bipolar transistor comprises a collector layer of first conductivity type having a collector breakdown voltage of a predetermined magnitude, a base layer of second conductivity type formed on the collector layer, an emitter layer of first conductivity type formed on the base layer, and a subcollector layer of first conductivity formed in a region remote laterally from an edge of the base layer to be connected to the collector layer.

REFERENCES:
patent: 4227203 (1980-10-01), Mikoshiba
patent: 5098853 (1992-03-01), Clark
IBM TDB vol. 31 No. 5 pp. 1-3 "Integrated Schottky Diodes in HBT Technology" Oct. 1988.

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