Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-03-13
1998-03-10
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257198, H01L 310328, H01L 310336
Patent
active
057264686
ABSTRACT:
A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.
REFERENCES:
patent: 5336909 (1994-08-01), Katoh et al.
patent: 5512785 (1996-04-01), Haver et al.
Marusen, "Silicon Based Hetero Devices", Chapter II. Recent Development of GaAs Based HBT, 1991, pp. 295-299.
Hayama et al., "Emmitter Size Effect On Current Gain In Fully Self-Aligned AlGaAs/GaAs HBT's With AlGaAs Surface Passivation Layer", IEEE Electron Device Letters, vol. 11, No. 9, 1990, pp. 388-390.
Hattori Ryo
Miyakuni Shinichi
Nakano Hirofumi
Oku Tomoki
Shimura Teruyuki
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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