Compound semiconductor bipolar device with side wall contact

Details Compound semiconductor bipolar device with side wall contact Compound semiconductor bipolar device with side wall contact

1989-03-15

1990-10-30

Mintel, William

357 56, 357 16, 357 4, H01L 2972

Patent

active

049672525

ABSTRACT:
A high-speed compound semiconductor device includes semiconductor layers of a group III-V alloy laminated in a vertical direction. The device uses a base electrode that contacts side walls and covers a step portion of a base layer. The device includes an intermediate layer positioned between and comprising a different semiconductor material than that of base and collector layers. The intermediate layer has a different etching rate than those of the base and collector layers. The intermediate layer can be a collector-side barrier layer formed between the collector and base layers in a HET or RHET device. The device of the present invention has reduced capacitance between the base and collector layers and reduced base layer resistance.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4835579 (1989-05-01), Ishibashi et al.
Yokoyama et al., Japanese Journal of Applied Physics, "A New Functional Resonant-Tunnelling Hot Electron Transistor (RHET)", Nov. 1985, vol. 24, No. 11, pp. L853-L854.
Futatsuji et al., "A Resonant-Tunnelling Bipolar (RBT): A Proposal and Demonstration for New Functional Devices with High Current Gains," IEEE Journal, 1986, pp. 9-12.
Ahmed, "Balistic Electron Motion in GaAs At Room Temperature", Electronics Letters, vol. 16, No. 13, Jun. 13, 1980, pp. 524-525.
Naoki Yokoyama et al., "Japanese Journal of Applied Physics", A New Functional, Resonant-Tunnelling Hot Electron Transistor (RHET), Nov. 1985, vol. 24, No. 11, pp. L853-L854.
T. Futatsuji et al., "IEEE Journal", A Resonant-Tunnelling Bipolar (RBT): A Proposal and Demonstration for New Functional Devices with High Current Gains, 1986, 9-12.
K. U. Ahmed, "Electronics Letters", Ballistic Electron Motion in GaAs at Room Temperature, vol. 16, No. 13, Jun. 13, 1980, pp. 524-525.

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