Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-01-23
1998-10-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 89, 117 90, 117104, 117954, C30B 2514
Patent
active
058273654
ABSTRACT:
A vapor phase growth process for the fabrication of a thin film form of compound semiconductor of elements of Groups III-V, using a halogen element-free hydride and a halogen element-free organic metal as the source materials for growth, is characterized in that a halide gas and/or a halogen gas that are free from the mother elements of the compound to be grown are added to the reaction atmosphere while the compound is growing. A trace amount(s) of the halide and/or halogen gas(es) that are free from the mother elements of the compound to be grown, such as HCl, is added to the reaction atmosphere while the compound is growing, thereby making it possible to flatten the heterojunction interface or effect the growth of high-quality crystals without deposition of polycrystals on a mask over a wide range.
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Gotoh Hideki
Shimoyama Kenji
Kunemund Robert
Mitsubishi Kasei Corporation
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