Compound semiconductor and compound semiconductor device...

Details Compound semiconductor and compound semiconductor device... Compound semiconductor and compound semiconductor device...

2008-05-06

2008-05-06

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S094000, C257S096000, C257S099000, C257S103000, C257S057000, C257S059000, C257S072000, C257S083000, C257S257000, C257S290000, C257S351000, C257S368000, C257S392000

Reexamination Certificate

active

11298490

ABSTRACT:
A back electrode6is formed in the back of a Si single crystal substrate2of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer3having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer4(0≦w<1, 0≦x<1, w+x<1) having a thickness of 0.01-0.5 μm, and an n-type hexagonal InyGazAl1-y-zN single crystal layer5(0≦y<1, 0<z≦1, y+z≦1) having a thickness of 0.1-5 μm and a carrier concentration of 1011-1016/cm3are stacked in order on an n-type Si single crystal substrate top2having a crystal-plane orientation {111}, a carrier concentration of 1016-1021/cm3, and a surface electrode7is formed on a surface of a hexagonal InyGazAl1-y-zN single crystal layer5, so as to provide a compound semiconductor device which causes little energy loss and allows an high efficiency and a high breakdown voltage.

REFERENCES:
patent: 5432808 (1995-07-01), Hatano et al.
patent: 6348704 (2002-02-01), Teraguchi
patent: 6765232 (2004-07-01), Takahashi et al.
patent: 2004/0053438 (2004-03-01), Abe et al.
patent: 09-052798 (1997-02-01), None
patent: 2001-177190 (2001-06-01), None
patent: 2003-060212 (2003-02-01), None
patent: WO 96/09653 (1996-03-01), None
S. Nishino et al., “Epitaxial Growth and Electric Characteristics of Cubic SiC on Silicon”, J. Appl. Phys., vol. 61, No. 10, May 15, 1997, pp. 4889-4893.

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