Compound semiconductor and compound semiconductor device...

Details Compound semiconductor and compound semiconductor device... Compound semiconductor and compound semiconductor device...

2008-05-06

2008-05-06

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S094000, C257S096000, C257S099000, C257S103000, C257S057000, C257S059000, C257S072000, C257S083000, C257S257000, C257S290000, C257S351000, C257S368000, C257S392000

Reexamination Certificate

active

07368757

ABSTRACT:
A back electrode6is formed in the back of a Si single crystal substrate2of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer3having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer4(0≦w<1, 0≦x<1, w+x<1) having a thickness of 0.01-0.5 μm, and an n-type hexagonal InyGazAl1-y-zN single crystal layer5(0≦y<1, 0<z≦1, y+z≦1) having a thickness of 0.1-5 μm and a carrier concentration of 1011-1016/cm3are stacked in order on an n-type Si single crystal substrate top2having a crystal-plane orientation {111}, a carrier concentration of 1016-1021/cm3, and a surface electrode7is formed on a surface of a hexagonal InyGazAl1-y-zN single crystal layer5, so as to provide a compound semiconductor device which causes little energy loss and allows an high efficiency and a high breakdown voltage.

REFERENCES:
patent: 5432808 (1995-07-01), Hatano et al.
patent: 6348704 (2002-02-01), Teraguchi
patent: 6765232 (2004-07-01), Takahashi et al.
patent: 2004/0053438 (2004-03-01), Abe et al.
patent: 09-052798 (1997-02-01), None
patent: 2001-177190 (2001-06-01), None
patent: 2003-060212 (2003-02-01), None
patent: WO 96/09653 (1996-03-01), None
S. Nishino et al., “Epitaxial Growth and Electric Characteristics of Cubic SiC on Silicon”, J. Appl. Phys., vol. 61, No. 10, May 15, 1997, pp. 4889-4893.

Affiliated with

Also associated with

Rating

Compound semiconductor and compound semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor and compound semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor and compound semiconductor device... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2799176