Compound resonator type semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

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372 26, 372 46, 372 50, 372 97, H01S 319, H01S 310

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047379626

ABSTRACT:
A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, and wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein, and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.

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Fattah and Wang, "Tuning of Semiconductor Interferometric Laser", IOOC, 1983 Digest, pp. 196-197.
Arsam Antreasyan et al., Applied Physics Letters, vol. 43, pp. 530-532 (1983).
Motoichi Ohtsu et al, Japanese Journal of Applied Physics, vol. 22, pp. 815-820 (1983).
Ismail H. A. Fattah et al., Applied Physics Letters, vol. 41, pp. 112-114 (1982).
Shyh Want et al., IEEE Translations on Quantum Electronics, vol. QE-19, pp. 610-617 (1982).
Arsam Antreasyan et al., Applied Physics Letters, vol. 42, pp. 562-564 (1983).

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