Compound for depositing copper layers

Details Compound for depositing copper layers Compound for depositing copper layers

1993-07-06

1995-09-12

Shaver, Paul F.

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C07F 108

Patent

active

054497990

ABSTRACT:
Described is the deposition of copper-containing layers on substrates by decomposition of organometallic copper compounds containing acetylacetonato or substituted acetylacetonato and isonitrile. The decomposition is preferably carried out in accordance with CVD method.

REFERENCES:
patent: 4915988 (1990-04-01), Erbil
patent: 4927670 (1990-05-01), Erbil
patent: 5306836 (1994-04-01), Purdy
Norman, et al., "New OMCVD Precursors For Selective Copper Metalization", Journal de Physique IV, 1:C2-271--C2-279 (1991).
Shin, et al., "Selective Low-Temperature Chemical Vapor Deposition of Copper from (Hexafluoroacetyl-acetonato)copper(I)trimethylphosphine ,(hfa)CuP(Me).sub.3 ", Advanced Materials, 3:246-248 (1991).
Ito, et al., "A New Preparation and Some Reactions of Organocopper(I) Isonitrile Complexes", Journal of Organometallic Chemistry, 85:395-401 (1975).
Nast, et al., "Stabile Addukte von Kupfer(I)-acetylacetonat", Chem Ber., 102:3224-3228 (1969).

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