Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – In compound semiconductor material
Patent
1996-01-17
1997-11-11
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
In compound semiconductor material
257192, H01L 2358, H01L 310328
Patent
active
056867565
ABSTRACT:
A compound semiconductor field effect transistor has a semiconductive layer made of a compound which consists of a single III group element and a single V group element or a compound which consists of two III group elements and a single V group element in the periodic table and a passivation film for protecting the surface of the semiconductive layer. This passivation film is formed of a chalcopyrite made of a compound which consists of a single I group element, a single III group element and two VI group elements or chalcopyrite made of a compound which consists of a single II group element, a single IV group element and two V group elements in the periodic table. Those chalcopyrites have lattice constants close to or equal to a lattice constant of the semiconductive layer. Those chalcopyrites have band gaps wider than that of the semiconductive layer. The semiconductive layer may be GaAs and InP. The chalcopyrite may be (Cu.sub.0.12 Ag.sub.0.88)AlS.sub.2 and (Zn.sub.0.04 Cd.sub.0.96)SiP.sub.2.
REFERENCES:
"Analysis of electrical and optical properties of insulating film-GaAs interfaces using MESFET-type structures," M. Ozeki et al, J. Vac. Sci. Technol., 21(2), Jul./Aug. 1982, pp. 438-441.
"Correlation Between Surface-State Density and Impact Ionization Phenomena in GaAs MESFET's," A. Paccagnella et al, IEEE Transactions on Electron Devices, vol. 38, No. 12, Dec. 1991, pp. 2682-2684.
Loke Steven H.
NEC Corporation
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