Compound field effect transistor

Details Compound field effect transistor Compound field effect transistor

1975-07-30

1978-08-15

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307251, 307304, 330307, 330277, 330 94, 357 22, 357 55, H01L 2702

Patent

active

041077253

ABSTRACT:
A horizontal junction-type field effect transistor having a saturated drain current to drain voltage characteristic and constituting an input transistor and a vertical junction-type field effect transistor having an unsaturated drain current to drain voltage characteristic and constituting an output transistor are connected in cascode fashion to compose a compound field effect transistor.
This compound field effect transistor has a saturated characteristic, a high transconductance gm and a high breakdown voltage resembling those of a pentode vacuum tube.
This compound field effect transistor is constructed in the form of monolithic integrated circuitry by the combined use of the dielectric isolation technique utilizing mesa groove and the pn-junction isolation technique.

REFERENCES:
patent: 3725136 (1973-04-01), Morgan
patent: 3742261 (1973-06-01), Schneider et al.
patent: 3767946 (1973-10-01), Berger et al.
patent: 3828230 (1974-08-01), Nisizawa et al.
patent: 3886001 (1975-05-01), Dobkin
patent: 3908187 (1975-09-01), Sheldon et al.
patent: 3921089 (1975-11-01), Tsurushima
G. Csanky, "Combining FETs for Higher Gains," Electronic Design, vol. 11, Sep. 27, 1963, pp. 36-44.
G. Evan-Hart, "The Replacement of Thermionic Values by Junction Field Effect Hybrid Circuits," Electronic Components, vol. 14 #2, Jan. 26, 1973, pp. 78-81.

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