Compound electrode stack capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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3613215, 257295, 257303, H01G 406

Patent

active

058256091

ABSTRACT:
This invention is directed to a semiconductor memory device including a storage element having a ferroelectric material or a capacitor dielectric material between a top (plate) electrode and a bottom (stack) electrode. In particular, the invention pertains to the design and fabrication of the stack electrode, which is described as compound because it is comprised of two or more materials which are either patterned separately (with at least one material being deposited and patterned prior to the deposition of the others), or arranged so that each of the component materials significantly contributes to the area over which the ferroelectric or capacitor dielectric is initially deposited. These compound stack electrodes may offer ease in processing, more economical use of noble metal materials, and potentially increased mechanical stability (e.g., resistance to hillocking) relative to solid, single-material electrodes of the same dimensions.

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patent: 5191510 (1993-03-01), Huffman
patent: 5262662 (1993-11-01), Gonzalez et al.
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patent: 5581436 (1996-12-01), Summerfelt et al.
Kaga et al., "Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" IEEE Transactions on Electron Devices 38(2):255-260(1991).

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