Compound diode assembly of reduced leakage current

Details Compound diode assembly of reduced leakage current Compound diode assembly of reduced leakage current

1989-12-04

1991-01-01

Hille, Rolf

357 33, 357 46, 357 52, H01L 29480, H01L 2900, H01L 2720, H01L 29340

Patent

active

049822454

ABSTRACT:
A twin diode assembly is disclosed which has a pair of pn-junction diodes formed on a single semiconductor substrate to provide a common cathode. In order to reduce the flow of leakage current from one diode to the other through the common substrate, a semiconductor region of a specified conductivity type is formed in the substrate so as to provide a portion intervening between the pair of diodes. This intervening region efficiently collects the minority carriers diffusing from one diode toward the other when either of the two pn-junctions is forward biased.

REFERENCES:
patent: 4071852 (1978-01-01), Kannam
patent: 4110775 (1978-08-01), Festa
patent: 4158206 (1979-06-01), Neilson

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