Compound diffused regions for emitter-coupled logic circuits

Details Compound diffused regions for emitter-coupled logic circuits Compound diffused regions for emitter-coupled logic circuits

1971-09-01

1976-05-25

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148188, 148175, 357 51, H01L 734

Patent

active

039590402

ABSTRACT:
There is provided a method and apparatus for use in fabrication of emitter-coupled logic circuits in integrated circuit form in which the base regions for transistor-transistor logic transistors and tub regions for emitter resistors for use in these circuits are fabricated utilizing a compound diffusion process. The use of the compound diffusion process both reduces spiking problems prevalent with emitter resistors while at the same time enabling the appropriate doping concentrations in the bases of both the ECL transistors and the TTL transistors to be established by opening up these regions during specified portions of the fabrication process.

REFERENCES:
patent: 3354005 (1967-11-01), Lepiane et al.
patent: 3445302 (1969-05-01), Lepiane
patent: 3596149 (1971-07-01), Makimoto
patent: 3615932 (1971-10-01), Makimoto et al.
patent: 3676231 (1972-07-01), Medvecky et al.
patent: 3770519 (1973-11-01), Wiedmann

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