Compound crystal and method of manufacturing same

Details Compound crystal and method of manufacturing same Compound crystal and method of manufacturing same

2007-05-01

2007-05-01

McNeil, Jennifer (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S446000, C117S952000, C117S953000

Reexamination Certificate

active

10734221

ABSTRACT:
Provided are a compound semiconductor crystal substrate capable of reducing planar defects such as twins and anti-phase boundaries occurring in epitaxially grown crystals without additional steps beyond epitaxial growth, and a method of manufacturing the same. A compound single crystal substrate, the basal plane of which is a nonpolar face, with said basal plane having a partial surface having polarity (a partial polar surface). Said partial polar surface is a polar portion of higher surface energy than said basal plane. A method of manufacturing the compound single crystal substrate, comprising the steps of: epitaxially growing a compound single crystal in the normal direction on a basal plane of a compound single crystal substrate wherein the basal plane is a nonpolar face and has a partial polar surface in a portion thereof, and either cutting the compound single crystal layer that has been grown in parallel to the basal plane, or removing at least said substrate to obtain a compound single crystal block, a basal plane of which is a nonpolar face only having a partial polar surface with the highest surface energy in a portion thereof.

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