Compositions for the currentless deposition of ternary...

Details Compositions for the currentless deposition of ternary... Compositions for the currentless deposition of ternary...

2004-04-22

2010-12-14

Klemanski, Helene (Department: 1793)

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

C106S001270

Reexamination Certificate

active

07850770

ABSTRACT:
The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

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Abstract of JP 04/297001, Oct. 1992; 2 pages.
English translation of JP 04/297001, Oct. 1992, 28 pages.

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