Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-03-28
2006-03-28
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S753000, C438S755000, C134S002000, C510S175000
Reexamination Certificate
active
07018937
ABSTRACT:
A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine compound. The semi-aqueous composition includes glacial acetic acid and one or more components including a fluoride compound and a pyridine compound. The composition can be used in removing processing byproducts from substrate assembly, including MRAM devices, that include at least a metal containing region and processing byproducts, where removing the processing byproducts includes exposing the substrate assembly to the composition for a time effective to remove at least a portion of the processing byproducts.
REFERENCES:
patent: 4215005 (1980-07-01), Vander Mey
patent: 6012469 (2000-01-01), Li et al.
patent: 6090721 (2000-07-01), Yates
patent: 6117351 (2000-09-01), Li et al.
patent: 6165803 (2000-12-01), Chen et al.
patent: 6192899 (2001-02-01), Li et al.
patent: 6310018 (2001-10-01), Behr et al.
patent: 6316370 (2001-11-01), Mercaldi et al.
patent: 6417561 (2002-07-01), Tuttle
patent: 6453914 (2002-09-01), Torek et al.
patent: 6473328 (2002-10-01), Mercaldi
patent: 6485989 (2002-11-01), Signorini
patent: 6486108 (2002-11-01), Yates et al.
patent: 6492309 (2002-12-01), Behr et al.
patent: 6517738 (2003-02-01), Torek et al.
patent: 6521931 (2003-02-01), Sandhu et al.
patent: 6562726 (2003-05-01), Torek et al.
patent: 2002/0139387 (2002-10-01), Yates
patent: 2002/0173156 (2002-11-01), Yates et al.
patent: 2003/0003762 (2003-01-01), Cotte et al.
patent: 2003/0125225 (2003-07-01), Xu et al.
patent: 2003/0216269 (2003-11-01), DeYoung et al.
Morrison and Boyd, Organic Chemistry 4th ed, Allyn and Bacon: Boston, 1983, p. 735.
CRC Handbook of Chemistry and Physics, 63rd ed, CRC Press: Boca Raton, Florida, 1982, p. F-74, Table II.
http://safety.dri.edu/Hazards/HydrofluoricAcidGuidelines.pdf.
Butner, “Computing Unplugged,” IBM Think Research, [online]. [Retrieved on Jun. 19, 2002]. Retrieved from the Internet:<http://www.research.ibm.com./thinkresearch/pages.2001/20010202—mram.shtml.
Daughton, “Advanced MRAM Concepts,” Feb. 7, 2001: 1-6.
Daughton, “Magnetoresistive Random Access Memory (MRAM),” Feb. 4, 2000: 1-13.
Wolfe et al., “Wet Processing: Cleaning, Etching and Liftoff,”Silicon Processing for the VLSI Era vol. 1-Process Technology; Sunset Beach, CA 1986; 514-537.
Wolfe et al., “Dry Etching for VLSI Fabrication,”Silicon Processing for the VLSI Era vol. 1-Process Technology; Sunset Beach, CA 1986; 539-581.
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
Pham Thanhha
Schillinger Laura M.
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