Compositions – Etching or brightening compositions
Reexamination Certificate
2008-07-15
2008-07-15
Tran, Binh X (Department: 1792)
Compositions
Etching or brightening compositions
C252S079200, C252S079300, C252S079400, C510S175000, C438S745000
Reexamination Certificate
active
07399424
ABSTRACT:
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.
REFERENCES:
patent: 3839111 (1974-10-01), Ham et al.
patent: 4274907 (1981-06-01), Vig et al.
patent: 4497684 (1985-02-01), Sebesta
patent: 4508591 (1985-04-01), Bartlett et al.
patent: 4989063 (1991-01-01), Kolesar, Jr.
patent: 5181985 (1993-01-01), Lampert et al.
patent: 5202572 (1993-04-01), Kobayashi
patent: 5300463 (1994-04-01), Cathey et al.
patent: 5366912 (1994-11-01), Kobayashi
patent: 5536602 (1996-07-01), Nakao
patent: 5571447 (1996-11-01), Ward et al.
patent: 5622787 (1997-04-01), Sakata et al.
patent: 5645737 (1997-07-01), Robinson et al.
patent: 5698348 (1997-12-01), Nakao
patent: 5698503 (1997-12-01), Ward et al.
patent: 5702849 (1997-12-01), Sakata et al.
patent: 5736456 (1998-04-01), Akram
patent: 5817549 (1998-10-01), Yamazaki et al.
patent: 5853922 (1998-12-01), Nakao
patent: 5855811 (1999-01-01), Grieger et al.
patent: 5858625 (1999-01-01), Nakao
patent: 5928969 (1999-07-01), Li et al.
patent: 5949143 (1999-09-01), Bang
patent: 5972862 (1999-10-01), Torii et al.
patent: 5981454 (1999-11-01), Small
patent: 6044851 (2000-04-01), Grieger et al.
patent: 6057583 (2000-05-01), Gardner et al.
patent: 6096629 (2000-08-01), Tsai et al.
patent: 6147002 (2000-11-01), Kneer
patent: 6162739 (2000-12-01), Sumnitsch et al.
patent: 6163061 (2000-12-01), Iida
patent: 6194326 (2001-02-01), Gilton
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6207353 (2001-03-01), Armacost et al.
patent: 6211527 (2001-04-01), Chandler
patent: 6217416 (2001-04-01), Kaufman et al.
patent: 6221786 (2001-04-01), Hsu et al.
patent: 6224785 (2001-05-01), Wojtczak et al.
patent: 6232228 (2001-05-01), Kwag et al.
patent: 6232232 (2001-05-01), Lee et al.
patent: 6235122 (2001-05-01), Zhang et al.
patent: 6235693 (2001-05-01), Cheng et al.
patent: 6248704 (2001-06-01), Small et al.
patent: 6249021 (2001-06-01), Furuhata
patent: 6268277 (2001-07-01), Bang
patent: 6277507 (2001-08-01), Anzaki et al.
patent: 6284721 (2001-09-01), Lee
patent: 6303047 (2001-10-01), Aronowitz et al.
patent: 6309926 (2001-10-01), Bell et al.
patent: 6323169 (2001-11-01), Abe et al.
patent: 6333221 (2001-12-01), Lee
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6350425 (2002-02-01), Hoffman et al.
patent: 6379573 (2002-04-01), Kim et al.
patent: 6391795 (2002-05-01), Catabay et al.
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 6453924 (2002-09-01), Wang et al.
patent: 6492731 (2002-12-01), Catabay et al.
patent: 6533832 (2003-03-01), Steckenrider et al.
patent: 6541369 (2003-04-01), Huang et al.
patent: 6585910 (2003-07-01), Kikuyama et al.
patent: 6592776 (2003-07-01), Wang et al.
patent: 6646348 (2003-11-01), Grumbine et al.
patent: 6673757 (2004-01-01), Kneer
patent: 6696326 (2004-02-01), Zhang et al.
patent: 6703319 (2004-03-01), Yates et al.
patent: 6756674 (2004-06-01), Catabay et al.
patent: 6762132 (2004-07-01), Yates
patent: 6844345 (2005-01-01), Hebeisen et al.
patent: 6934443 (2005-08-01), Hikichi et al.
patent: 2001/0016408 (2001-08-01), Farnworth
patent: 2001/0051128 (2001-12-01), Hoffman et al.
patent: 2002/0000673 (2002-01-01), Farnworth
patent: 2002/0052096 (2002-05-01), Zhang et al.
patent: 2002/0081759 (2002-06-01), Huang et al.
patent: 2002/0086513 (2002-07-01), Farnworth
patent: 2002/0104552 (2002-08-01), Bay et al.
patent: 2002/0169163 (2002-11-01), Hebeisen et al.
patent: 2002/0185749 (2002-12-01), Farnworth
patent: 2003/0081899 (2003-05-01), Hikichi et al.
patent: 2003/0143807 (2003-07-01), Chen et al.
patent: 2003/0194854 (2003-10-01), Farnworth
patent: 2004/0101988 (2004-05-01), Roman et al.
patent: 2005/0032326 (2005-02-01), Chen et al.
patent: 859404 (1998-01-01), None
patent: 52108351 (1977-09-01), None
patent: 358110078 (1983-06-01), None
patent: 03044646 (1991-02-01), None
patent: 63113456 (1998-05-01), None
Micro)n Technology, Inc.
Tran Binh X
Whyte Hirschboeck Dudek SC
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