Compositions for chemical mechanical planarization of copper

Details Compositions for chemical mechanical planarization of copper Compositions for chemical mechanical planarization of copper

2005-03-15

2005-03-15

Norton, Nadine G. (Department: 1765)

Compositions

Etching or brightening compositions

C252S079400, C438S692000

Reexamination Certificate

active

06866792

ABSTRACT:
The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4] nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.

REFERENCES:
patent: 3137600 (1964-06-01), Margulies et al.
patent: 3385682 (1968-05-01), Lowen
patent: 3410802 (1968-11-01), Radimer et al.
patent: 3592773 (1971-07-01), Müller
patent: 4013758 (1977-03-01), Osborg
patent: 4556449 (1985-12-01), Nelson
patent: 4724042 (1988-02-01), Sherman
patent: 5225034 (1993-07-01), Yu et al.
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5439551 (1995-08-01), Meikle et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5575837 (1996-11-01), Kodama et al.
patent: 5614444 (1997-03-01), Farkas et al.
patent: 5735963 (1998-04-01), Obeng
patent: 5770517 (1998-06-01), Gardner et al.
patent: 5780358 (1998-07-01), Zhou et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5863307 (1999-01-01), Zhou et al.
patent: 5897375 (1999-04-01), Watts et al.
patent: 5899740 (1999-05-01), Kwon
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5981454 (1999-11-01), Small
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 6140239 (2000-10-01), Avanzino et al.
patent: 6156661 (2000-12-01), Small
patent: 6251150 (2001-06-01), Small et al.
patent: 6313039 (2001-11-01), Small et al.
patent: 6347978 (2002-02-01), Fang et al.
patent: 6447693 (2002-09-01), Pryor
patent: 52081692 (1993-09-01), None
patent: 9804646 (1998-02-01), None
patent: 9810050 (1998-03-01), None
patent: WO 03040252 (2003-05-01), None
Notification of Transmittal of the International Search Report of the Declaration in International Application No. PCT/US 02/39080 of EKC Technology, Inc.
International Preliminary Examination Report, mailed Jun. 3, 2004, in International Application No. PCT/US02/39080 of EKC Technology, Inc.

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