Compositions for chemical mechanical planarization of...

Details Compositions for chemical mechanical planarization of... Compositions for chemical mechanical planarization of...

2006-04-25

2006-04-25

Marcheschi, Michael (Department: 1755)

Abrasive tool making process, material, or composition

With inorganic material

C051S308000, C051S309000, C106S003000, C438S690000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

07033409

ABSTRACT:
The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

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“Advanced Material and Chemistries for CMP Processing” by R. J. Small, CMP World '99, Nov. 1-3, 1999 21 pgs.
“Dissolution of Copper and Tantalum Films in Hydroxylamine Based Silica Slurries Under CMP Conditions” by Wayne Huang et al., 1999 Joint Intl. Meeting, Oct. 17-2.
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“Nitrogen-Silica Based Slurry Development for Copper 2nd Step Application” by Small et al., 2001 VMIC Conference, LP Nov. 28-29, 2001, 6 pages.

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