Compositions and processes for photoresist stripping and...

Details Compositions and processes for photoresist stripping and... Compositions and processes for photoresist stripping and...

2005-10-28

2009-06-09

Webb, Gregory E (Department: 1796)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C510S175000, C510S176000

Reexamination Certificate

active

07543592

ABSTRACT:
Improved compositions and processes for removing photoresists, polymers, post etch residues, and post oxygen ashing residues from interconnect, wafer level packaging, and printed circuit board substrates are disclosed. One process comprises contacting such substrates with mixtures containing an effective amount of organic ammonium compound(s); from about 2 to about 20 weight percent of oxammonium compound(s); optionally organic solvent(s); and water.

REFERENCES:
patent: 3075923 (1963-01-01), Berst et al.
patent: 3147224 (1964-09-01), Gauntt et al.
patent: 3600322 (1971-08-01), Morison
patent: 3625763 (1971-12-01), Melillo
patent: 3650969 (1972-03-01), Baltakmens et al.
patent: 3789907 (1974-02-01), Nakata et al.
patent: 3813309 (1974-05-01), Bakos et al.
patent: 4269724 (1981-05-01), Hodson
patent: 4278577 (1981-07-01), Song
patent: 4395479 (1983-07-01), Ward et al.
patent: 4401474 (1983-08-01), Ward, Jr. et al.
patent: 4403029 (1983-09-01), Ward, Jr. et al.
patent: 4428871 (1984-01-01), Ward et al.
patent: 4483917 (1984-11-01), Archer et al.
patent: 4592787 (1986-06-01), Johnson
patent: 4744834 (1988-05-01), Haq
patent: 4770713 (1988-09-01), Ward
patent: 5091103 (1992-02-01), Dean et al.
patent: 5846695 (1998-12-01), Iwata et al.
patent: 5962197 (1999-10-01), Chen
patent: 6531436 (2003-03-01), Sahbari et al.
patent: 6546939 (2003-04-01), Small
patent: 6610456 (2003-08-01), Allen et al.
patent: 6670095 (2003-12-01), Sato et al.
patent: 6683202 (2004-01-01), Ogata et al.
patent: 6692887 (2004-02-01), Suwa et al.
patent: 6727032 (2004-04-01), Suwa et al.
patent: 6730452 (2004-05-01), Brock et al.
patent: 6737215 (2004-05-01), Dammel et al.
patent: 6749989 (2004-06-01), Hada et al.
patent: 6794110 (2004-09-01), Breyta et al.
patent: 6818377 (2004-11-01), Kodama et al.
patent: 2002/0068684 (2002-06-01), Peters et al.
patent: 2004/0067860 (2004-04-01), Lee
patent: 2004/0137379 (2004-07-01), Ikemoto
patent: 2004/0234904 (2004-11-01), Rieker
patent: 2004/0256358 (2004-12-01), Shimizu et al.
patent: 0 801 422 (1997-10-01), None
patent: WO 2005/043250 (2005-05-01), None
N.L. Brakensiek et al., “Wet-recess Process Optimization of a Bottom Antireflective Coating for the Via First Dual Damascene Scheme,”Proc. SPIE: Adv. in Resist Tech.&Proc. XII,v. 5376 (J. Sturtevant, ed.), 2004.
C.J. Neef et al., “New BARC Materials for the 65-nm Node in 193-nm Lithography,”Proc. SPIE: Adv. in Resist Tech.&Proc. XII,v. 5376 (J. Sturtevant, ed.), 2004.
L. He et al., “Bottom Anti-Reflective Coatings (BARCs) for 157-nm Lithography,”Proc. Soc. Photo-Optical Instrum. Eng.,2003.
J.D. Meador et al., “193-nm Multilayer Imaging Systems,”Proc. Soc. Photo-Optical Instrum. Eng.,2003.
J.D. Meador et al., “New Materials for 193-nm Trilayer Imaging,”Proc. SPIE: Adv. in Resist Tech.&Proc. XII,v. 5376 (J. Sturtevant, ed.), 2004.
M. Bhave et al., “Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process,”Proc. SPIE: Adv. in Resist Tech.&Proc. XII,v. 5376 (J. Sturtevant, ed.), 2004.
M. Weimer et al., “New Material for 193-nm Bottom Anti-Reflective Coatings,” Proc. Soc. Photo-Optical Instrum. Eng., 2003.
R. Huang, “Via fill properties of organic BARCs in Dual Damascene application,” Proc. SPIE: Adv. in Resist Tech. & Proc. XII, v. 5376 (J. Sturtevant, ed.), 2004.
K.A. Nowak, “Void Elimination Research in Bottom Anti-Reflective Coatings for Dual Damascene Lithography,”Proc. Soc. Photo-Optical Instrum. Eng.,2003.
Advances in Polymer Science, vol. 172, 2005, p. 121-139, “Chemical Amplification Resists for Microlithography”.

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