Compositions and methods for tantalum CMP

Details Compositions and methods for tantalum CMP Compositions and methods for tantalum CMP

2008-01-08

2008-01-08

Shakeri, Hadi (Department: 3723)

Abrading

Abrading process

With tool treating or forming

C451S036000, C051S302000, C438S692000, C252S079400

Reexamination Certificate

active

11235765

ABSTRACT:
A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.

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