Compositions and methods for high-efficiency...

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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C510S176000, C510S255000, C438S906000, C134S036000, C134S902000, C134S034000

Reexamination Certificate

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07119052

ABSTRACT:
A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

REFERENCES:
patent: 5944996 (1999-08-01), DeSimone et al.
patent: 6306564 (2001-10-01), Mullee
patent: 6521466 (2003-02-01), Castrucci
patent: 6743078 (2004-06-01), McClain et al.
patent: 6871656 (2005-03-01), Mullee
Post-Etch Cleaning of 300mm Dual Damascene Low-K Dielectric Structures Using Supercritical CO2, Abs. 796, 204thMeeting 2003 The Electrochemical Society, Inc., Robert B. Turkot, Jr., et al.
Supercritical CO2 Post-Etch Cleaning of a Patterned Porous Low-K Dielectric, Ashland Specialty Chemical Company, D. Peters, et al., pp. 194-201.

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