Compositions and methods for forming a semiconducting and/or...

Details Compositions and methods for forming a semiconducting and/or... Compositions and methods for forming a semiconducting and/or...

2006-03-10

2009-06-30

Speer, Timothy M (Department: 1794)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S447000, C438S151000, C438S478000, C438S479000, C438S484000

Reexamination Certificate

active

07553545

ABSTRACT:
Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

REFERENCES:
patent: 4027053 (1977-05-01), Lesk
patent: 4052430 (1977-10-01), Yajima et al.
patent: 4276424 (1981-06-01), Peterson, Jr. et al.
patent: 4330358 (1982-05-01), Grabmaier et al.
patent: 4407858 (1983-10-01), Hanke et al.
patent: 4537942 (1985-08-01), Brown-Wensley et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4569953 (1986-02-01), West et al.
patent: 4611035 (1986-09-01), Brown-Wensley et al.
patent: 4683145 (1987-07-01), Nishimura et al.
patent: 4683146 (1987-07-01), Hirai et al.
patent: 4704444 (1987-11-01), Brown-Wensley et al.
patent: 4726963 (1988-02-01), Ishihara et al.
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 4818560 (1989-04-01), Ishihara et al.
patent: 4820788 (1989-04-01), Zeigler
patent: 4830890 (1989-05-01), Kanai
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4841083 (1989-06-01), Nagai et al.
patent: 4851297 (1989-07-01), Allen et al.
patent: 4868014 (1989-09-01), Kanai et al.
patent: 4992520 (1991-02-01), Zeigler
patent: 5262357 (1993-11-01), Alivisatos et al.
patent: 5559057 (1996-09-01), Goldstein
patent: 5576248 (1996-11-01), Goldstein
patent: 5711803 (1998-01-01), Pehnt et al.
patent: 5719076 (1998-02-01), Guha
patent: 5866471 (1999-02-01), Beppu et al.
patent: 5942637 (1999-08-01), Boudjouk et al.
patent: RE36314 (1999-09-01), Yamazaki et al.
patent: 5989945 (1999-11-01), Yudasaka et al.
patent: 6013872 (2000-01-01), Woditsch et al.
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6200508 (2001-03-01), Jacobson et al.
patent: 6268041 (2001-07-01), Goldstein
patent: 6277740 (2001-08-01), Goldstein
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 6355198 (2002-03-01), Kim et al.
patent: 6413790 (2002-07-01), Duthaler et al.
patent: 6432740 (2002-08-01), Chen
patent: 6503570 (2003-01-01), Matsuki et al.
patent: 6514801 (2003-02-01), Yudasaka et al.
patent: 6517911 (2003-02-01), Matsuki
patent: 6518087 (2003-02-01), Furusawa et al.
patent: 6527847 (2003-03-01), Matsuki
patent: 6541354 (2003-04-01), Shimoda et al.
patent: 6593591 (2003-07-01), Yudasaka et al.
patent: 6767775 (2004-07-01), Yudasaka et al.
patent: 6878871 (2005-04-01), Scher et al.
patent: 7078276 (2006-07-01), Zurcher et al.
patent: 2003/0034486 (2003-02-01), Korgel
patent: 2003/0045632 (2003-03-01), Shiho et al.
patent: 2003/0087110 (2003-05-01), Furusawa et al.
patent: 2003/0227116 (2003-12-01), Halik et al.
patent: 2004/0248429 (2004-12-01), Aoki et al.
patent: 2005/0145163 (2005-07-01), Matsuki et al.
patent: 2005/0176183 (2005-08-01), Aoki et al.
patent: 2005/0181566 (2005-08-01), Machida et al.
patent: 1 085 560 (2001-03-01), None
patent: 1 085 579 (2001-03-01), None
patent: 1 087 428 (2001-03-01), None
patent: 1 087 433 (2001-03-01), None
patent: 1 113 502 (2001-07-01), None
patent: 0 902 030 (2002-10-01), None
patent: 60-242612 (1985-12-01), None
patent: 6-191821 (1994-07-01), None
patent: 7-267621 (1995-10-01), None
patent: 9-45922 (1997-02-01), None
patent: WO 00/59014 (2000-10-01), None
patent: WO 00/59041 (2000-10-01), None
Tsutomu Takadera et al.; Patent Abstracts of Japan, Publication No. 2000031066 A, Application No. 10195985: Method for Forming Silicon Film and Manufacture of Solar Battery; Jan. 28, 2000.
Keiichi Fukuyama, Takadera Tsutomu and Shimizu Masabumi; Delphion Summary; Publication No. JP2000007317A2; Application No. JP1998000173683; Formation of Silicon Film; Date Published: Jan. 11, 2000.
Boudjouk et al.; Tetradecachlorocyclohexasilane-Dianion-Containing Compound; Patent Abstracts of Japan; Jun. 29, 1999.
Yutaka Kitsuno, Yano Kotaro, Sakawaki Akira and Kawasaki Keiji; Delphion Summary; Publication No. JP09045922A2, Application No. JP1995000192044; Method for Forming Poly Crystal Silicon Film; Date Published: Feb. 14, 1997.
Kotaro Yano, Kitsuno Yutaka, Sakawaki Akira and Kawasaki Keiji, Delphion Summary; Publication No. JP07267621A2, Application No. JP1994000054004; Formation of Silicon Membrane; Date Published: Oct. 17, 1995.
Yukio Nishimura et al.; Patent Abstracts of Japan, Publication No. 60242612 A, Application No. 59098420; Depositing Film Forming Method; Dec. 2, 1985.
Yutaka Kitsuno, Kotaro Yano, Akira Sakawaki, Keiji Kawasaki; Method for forming poly crystal silicon film; Patent Abstracts of Japan; Publication Date: Feb. 14, 1997; Publication No. JP 09045922 A; Japanese Patent Office, Japan.
Kotaro Yano, Yutaka Kitsuno, Akira Sawawaki, Keiji Kawasaki; Formation of silicon membrane; Patent Abstracts of Japan; Publication Date: Oct. 17, 1995; Publication No. JP 07267621 A; Japanese Patent Office, Japan.
Kotaro Yano, Yutaka Kitsuno, Shoichi Tazawa, Keiji Kawasaki; Higher order silane containing solution for forming silicon film; Patent Abstracts of Japan; Publication Date: Jul. 12, 1994; Publication No. JP 06191821 A; Japanese Patent Office, Japan.
Yukio Nishimura, Hiroshi Matsuda, Masahiro Haruta, Yutaka Hirai, Takeshi Eguchi, Takashi Katagiri; Deposition film forming method; Patent Abstracts of Japan; Publication Date Dec. 2, 1985; Publication No. JP 60242612 A; Japanese Patent Office, Japan.

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