Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-02-15
2005-02-15
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S072000
Reexamination Certificate
active
06855949
ABSTRACT:
The electronic device includes a thin-film transistor (10) with an active layer (5) that comprises an organic semiconductor material and a carrier material that is free of charge camera. The carrier material has a conductivity below 10−6S/cm and is preferably electrically insulating. The thin-film transistor (10) has a mobility that is comparable to that of a transistor with an active layer that consists of an organic semiconductor material. Preferably, the organic semiconductor material is an oligomer. The composition used to apply the active layer may contain a photosensitive component. Using such a composition, the active layer can be relief-structured, thereby preventing any leakage current between neighboring transistors in the electronic device.
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J. Kalinowski et al, “Thomson-Like Electon-Hole Recombination in Organic Light-Emitting Diodes”, Japanese Journal of Applied Physics, Publicatin Office Japanese Journal of Applied Physics, Tokyo, JP, vol. 40, No. 38, Part 2, Mar. 15, 2001, pp. L282-L285, XP001078050.
De Leeuw Dagobert Michel
Gelinck Gerwin Hermanus
Huisman Bart-Hendrik
Koninklijke Philips Electronics , N.V.
Pham Hoai
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