Composition in a liquid used for removing a photoresist film and

Etching a substrate: processes – Nongaseous phase etching of substrate

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Details

216 49, 1566551, 134 2, 437229, 252 795, B44C 122

Patent

active

055447767

ABSTRACT:
The invention provides a method for removing a photoresist from a material comprising the steps of removing the photoresist from the material by use of remover composition comprising a solvent selected from the group consisting of 4-methoxy-1-buanol, 3-methoxy-1-butanol and a mixture thereof and propylene carbonate and rinsing the remover remaining on the device by use of water.

REFERENCES:
patent: 4078102 (1978-03-01), Bendz et al.

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