Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
2002-06-11
2004-05-25
Gupta, Yogendra N. (Department: 1751)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C510S254000
Reexamination Certificate
active
06740629
ABSTRACT:
BACKGROUND OF THE INVENTION
1. The Field of the Invention
The present invention relates to a composition for washing a polishing pad and a method for washing a polishing pad. More particularly, the present invention relates to a composition for washing a polishing pad which can effectively recover by inhibiting clogging generated in a polishing pad used for polishing wherein a water-insoluble compound are formed during polishing, and consumption of the polishing pad, and a method for washing a polishing pad using the composition for washing a polishing pad.
2. Description of the Prior Art
In chemical mechanical polishing (hereinafter, simply referred to as “CMP”) used for polishing a semiconductor wafer and the like, polishing is performed by supplying a slurry (aqueous dispersion) containing abrasive or the like to an interface between a polishing pad and a surface to be polished. In the case of using a porous material such as expanded polyurethane or the like as a polishing pad, clogging due to a wastage is gradually proceeding, and a removal rate is reduced. For this reason, in order to recover the surface of the polishing pad to the state suitable for CMP, a step for renewing a polishing surface called as dressing is performed. This dressing is performed by sliding a polishing body (dresser) with diamond powder or the like attached thereto on the surface of the polishing pad. As this dressing, a method designated “in situ dressing”, and a method designated “interval dressing” are known. The former is a method for dressing a region of a polishing pad which has not been polished during polishing, and the latter indicates a method for performing only dressing while polishing is stopped.
In today's CMP, in situ dressing is performed if necessary and, however, interval dressing is usually essential. The interval dressing is performed for around 5 to 30 seconds every polishing of one material to be polished. For this reason, there is a certain limit to improvement in a product yield. Further, in the interval dressing, only physical dressing is performed or dressing is performed while cooling water is supplied. However, there is scarcely an attempt to also use the chemical effects.
Recently, there has been disclosed an interval dressing using a cleaning agent composition containing an anionic surfactant in JP-A 2000-309796. However, such the cleaning agent composition can be used widely irrespective of a kind of a surface to be polished and a slurry used for polishing, whereas it is not necessarily a most suitable cleaning agent composition depending upon components constituting a semiconductor wafer and components contained in the slurry.
In addition, in JP-A 8-83780, JP-A 10-116804, JP-A 11-116948 and JP-A 2001-110759, as a slurry used in CMP, there has been disclosed methods using a slurry containing a component forming a compound which is insoluble in water containing a metal atom or its ion separated from a surface to be polished, for the purpose of preventing a metal constituting a surface to be polished from being excessively polished by a slurry, for the purpose of preventing an once polished metal from reattaching to the surface to be polished and the like.
To solve clogging to a polishing pad which was used in CMP using such the slurry is difficult by using only a mechanical treatment such as the conventional interval dressing and in situ dressing. And the interval dressing needs a longer time than the conventional one. For this reason, not only improvement in a product yield becomes further worse, but also dressing is performed for a longer period of time, a polishing pad, therefore, is consumed more, being not preferable.
SUMMARY OF THE INVENTION
The present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a composition for washing a polishing pad with which a water-insoluble compound was formed on at least a part of its surface during polishing, which can recover a removal rate, and which can further inhibit consumption of a polishing pad. In addition, an object of the present invention is to provide a method for washing a polishing pad using the composition for washing polishing pad, which can improve the productivity, and which can further inhibit consumption of a polishing pad.
The present invention is described as follows.
1. A composition for washing a polishing pad, which comprises a component for rendering a water-insoluble compound containing a metal atom or its ion separated from a surface to be polished water-soluble.
2. The composition for washing a polishing pad according to 1 above, wherein the above-mentioned component for rendering water-soluble is at least one selected from the group consisting of ammonia, potassium hydroxide, tetramethylammonium hydroxide, trimethyl-2-hydroxyethylammonium hydroxide, methyltrihydroxyethylammonium hydroxide, dimethyldihydroxyethylammonium hydroxide, tetraethylammonium hydroxide and trimethylethylammonium hydroxide.
3. The composition for washing a polishing pad according to 2 above, wherein the above-mentioned metal is at least one selected from the group consisting of copper, aluminum, tungsten and tantalum.
4. The composition for washing a polishing pad according to 1 above, further comprising a component forming a water-soluble complex for forming a water-soluble complex with the above-mentioned metal atom or its ion.
5. The composition for washing a polishing pad according to 4 above, wherein the above-mentioned component for rendering water-soluble is at least one selected from the group consisting of ammonia, potassium hydroxide, tetramethylammonium hydroxide, trimethyl-2-hydroxyethylammonium hydroxide, methyltrihydroxyethylammonium hydroxide, dimethyldihydroxyethylammonium hydroxide, tetraethylammonium hydroxide and trimethylethylammonium hydroxide.
6. The composition for washing a polishing pad according to 5 above, wherein the above-mentioned component forming a water-soluble complex has two or more functional groups which can coordinate on the above-mentioned metal atom or its ion.
7. The composition for washing a polishing pad according to 6 above, wherein the above-mentioned component forming a water-soluble complex is at least one selected from the group consisting of glycine, alanine, cysteine, amidosulfuric acid, lactic acid, citric acid, tartaric acid, malic acid, malonic acid, oxalic acid, succinic acid, fumaric acid and maleic acid.
8. The composition for washing a polishing pad according to 7 above, wherein the above-mentioned metal is at least one selected from the group consisting of copper, aluminum, tungsten and tantalum.
9. A method for washing a polishing pad to which a water-insoluble compound containing a metal atom or its ion separated from a surface to be polished is attached, and is characterized in that a polishing pad is to be contacted with a composition for washing a polishing pad which contains a component for rendering a water-insoluble compound containing a metal atom or its ion separated from a surface to be polished water-soluble.
10. The method for washing a polishing pad according to 9 above, wherein the above-mentioned component for rendering water-soluble is at least one selected from the group consisting of ammonia, potassium hydroxide, tetramethylammonium hydroxide, trimethyl-2-hydroxyethylammonium hydroxide, methyltrihydroxyethylammonium hydroxide, dimethyldihydroxyethylammonium hydroxide, tetraethylammonium hydroxide and trimethylethylammonium hydroxide.
11. The method for washing a polishing pad according to 10 above, wherein the above-mentioned metal is at least one selected from the group consisting of copper, aluminum, tungsten and tantalum.
12. The method for washing a polishing pad according to 9 above, further comprising a component forming a water-soluble complex for forming a water-soluble complex with the above-mentioned metal atom or its ion in the above-mentioned composition for washing a polishing pad.
13. The method for washing a polishing pad according to 12 above, wherein the above-mentioned comp
Ando Michiaki
Hattori Masayuki
Kawahashi Nobuo
Gupta Yogendra N.
JSR Corporation
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