Composition for selectively polishing silicon nitride layer...

Details Composition for selectively polishing silicon nitride layer... Composition for selectively polishing silicon nitride layer...

2007-05-15

2007-05-15

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S411000, C257SE21008, C257S023000, C257S219000

Reexamination Certificate

active

11251880

ABSTRACT:
To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride layer is obtainable, and a polishing method employing such a composition. A polishing composition which has silicon oxide abrasive grains, an acidic additive and water, wherein the acidic additive is such that when it is formed into a 85 wt % aqueous solution, the chemical etching rate of the silicon nitride layer is at most 0.1 nm/hr in an atmosphere of 80° C. Particularly preferred is one wherein the silicon oxide abrasive grains have an average particle size of from 1 to 50 nm, and the pH of the composition is from 3.5 to 6.5.

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