Composition for removing polymer residue of photosensitive...

Details Composition for removing polymer residue of photosensitive... Composition for removing polymer residue of photosensitive...

2006-12-19

2010-12-28

Webb, Gregory E (Department: 1796)

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

C510S176000, C510S506000

Reexamination Certificate

active

07858572

ABSTRACT:
Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80% by weight of a corrosion inhibitor shown in Formula 1; 10 to 80% by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2% by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components.

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International Search Report, dated Mar. 26, 2007, corresponding to PCT/KR2006/005563.

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