Composition for reduction-reoxidation type semiconductive cerami

Details Composition for reduction-reoxidation type semiconductive cerami Composition for reduction-reoxidation type semiconductive cerami

1989-06-14

1991-02-05

Rosenberg, Peter D.

Chemistry of inorganic compounds

Oxygen or compound thereof

Metal containing

423598, C01G 2300

Patent

active

049903233

ABSTRACT:
A composition for a reduction-reoxidation type semiconductive ceramic capcitor is disclosed which consists substantially of 100 mol % of a barium composite oxide consisting of BaTiO.sub.3 and BaZrO.sub.3 and having a BaZrO.sub.3 content in the range of 0 to 20 mol %, 0.3 to 3.0 mol % of Bi.sub.2 O.sub.3, and 0.1 to 8.5 mol % of at least one member selected from the group consisting of TiO.sub.2 and ZrO.sub.2 and further incorporates therein 0.001 to 1.00% by weight of at least one member selected from the group consisting of the oxides of Cr, Fe, Co, Zn, Cu, Al, Si, and Mg. This composition possesses a breakdown voltage of not less than 400 V, an insulation resistance of not less than 10.sup.9 .OMEGA., an electrostatic capacity of not less than 0.65 .mu.F/cm.sup.2 per unit surface area, and a magnitude, tan .delta., of less than 2.5%.

REFERENCES:
patent: 4233282 (1980-11-01), Arendt
patent: 4487755 (1984-12-01), Arendt
patent: 4534956 (1985-08-01), Arendt

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