Composition for polishing semiconductor layers

Details Composition for polishing semiconductor layers Composition for polishing semiconductor layers

2006-03-28

2006-03-28

Norton, Nadine G. (Department: 1765)

Compositions

Etching or brightening compositions

Inorganic acid containing

C252S079100, C252S079200, C252S079300, C510S175000, C510S254000, C510S255000, C510S257000, C106S014050

Reexamination Certificate

active

07018560

ABSTRACT:
An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed withR1, R2, R3and R4are radicals, R1has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4and SiCO.

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