Composition for oxide CMP

Details Composition for oxide CMP Composition for oxide CMP

1996-12-30

1998-06-02

Jones, Deborah

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

106 11, 51309, 1566531, 1566541, 438692, 438693, C03C 2506, C23F 100

Patent

active

057599173

ABSTRACT:
A chemical mechanical polishing composition comprising carboxylic acid, a salt and a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

REFERENCES:
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patent: 4944836 (1990-07-01), Beyer et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5264010 (1993-11-01), Brancaleoni et al.
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5382272 (1995-01-01), Cook et al.
patent: 5389352 (1995-02-01), Wang
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5480476 (1996-01-01), Cook et al.
NYACOI Colloidal Ceria Nitrate MSDS (Oct. 17, 1994).

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