Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-07-30
2010-06-22
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51007, C257SE51027, C257SE51028, C257SE51036
Reexamination Certificate
active
07741635
ABSTRACT:
Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
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Kim Gi Heon
Kim Seong Hyun
Kim Tae Gon
Lim Sang Chul
Youk Ji Ho
Electronics and Telecommunications Research Institute
Rabin & Berdo P.C.
Soward Ida M
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