Composition for off-axis growth sites on non-polar substrates

Details Composition for off-axis growth sites on non-polar substrates Composition for off-axis growth sites on non-polar substrates

1996-07-08

1997-09-16

Nguyen, Tuan H.

Metal treatment

Barrier layer stock material, p-n type

438798, H01L 21265

Patent

active

056680236

ABSTRACT:
Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.

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