Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-10-10
2006-10-10
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S093000
Reexamination Certificate
active
07119354
ABSTRACT:
Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
REFERENCES:
patent: 4634509 (1987-01-01), Shimizu et al.
patent: 5494859 (1996-02-01), Kapoor
patent: 5707783 (1998-01-01), Stauffer et al.
patent: 6037275 (2000-03-01), Wu et al.
patent: 6197913 (2001-03-01), Zhong
patent: 6313045 (2001-11-01), Zhong et al.
patent: 6359096 (2002-03-01), Zhong et al.
patent: 6376634 (2002-04-01), Nishikawa et al.
patent: 6391999 (2002-05-01), Crivello
patent: 6413647 (2002-07-01), Hayashi et al.
patent: 6512071 (2003-01-01), Hacker et al.
patent: 6533855 (2003-03-01), Gaynor et al.
patent: 6534025 (2003-03-01), Yano et al.
patent: 6596404 (2003-07-01), Albaugh et al.
patent: 6632489 (2003-10-01), Watanabe et al.
patent: 6639015 (2003-10-01), Nakashima et al.
patent: 6696538 (2004-02-01), Ko et al.
patent: 2002/0020327 (2002-02-01), Hayashi et al.
patent: 2002/0098279 (2002-07-01), Lyu et al.
patent: 2002/0155053 (2002-10-01), Nishiyama et al.
patent: 2002/0160207 (2002-10-01), Kohmura et al.
patent: 2003/0064321 (2003-04-01), Malik et al.
patent: 2003/0091838 (2003-05-01), Hayashi et al.
patent: 2003/0104225 (2003-06-01), Shiota et al.
patent: 2003/0157311 (2003-08-01), MacDougall et al.
patent: 1 205 438 (2002-05-01), None
patent: 1223192 (2002-07-01), None
patent: 1245642 (2002-10-01), None
patent: 1 123 753 (2003-08-01), None
patent: 63-015355 (1988-04-01), None
patent: 05-125191 (1993-05-01), None
patent: 06-145599 (1994-05-01), None
patent: 9-194298 (1997-07-01), None
patent: 11-246665 (1999-09-01), None
patent: 2000-44875 (2000-02-01), None
patent: 2002-30249 (2000-07-01), None
patent: 2000-309751 (2000-11-01), None
patent: 2000-309753 (2000-11-01), None
patent: 2000-345041 (2000-12-01), None
patent: 2001-002993 (2001-01-01), None
patent: 2001-049178 (2001-02-01), None
patent: 2001-049179 (2001-02-01), None
patent: 2001-055554 (2001-02-01), None
patent: 2001-080915 (2001-03-01), None
patent: 2001-98218 (2001-04-01), None
patent: 2001-115021 (2001-04-01), None
patent: 2001-115028 (2001-04-01), None
patent: 2001-115029 (2001-04-01), None
patent: 2001-130911 (2001-05-01), None
patent: 2001-131479 (2001-05-01), None
patent: 2001-157815 (2001-06-01), None
patent: 2001-164186 (2001-06-01), None
patent: 2001-203197 (2001-07-01), None
patent: 2001-240798 (2001-09-01), None
patent: 2001-354904 (2001-12-01), None
patent: 2002-020688 (2002-01-01), None
patent: 2002-020689 (2002-01-01), None
patent: 2002-023354 (2002-01-01), None
patent: 2002-030249 (2002-01-01), None
patent: 2002-038090 (2002-02-01), None
patent: WO 00/12640 (2000-03-01), None
patent: WO 03/088344 (2003-10-01), None
Inagaki et al., “Synthesis of Highly Ordered Mesoporous Materials from a Layered Polysilicate,”J. Chem. Soc., Chem. Commun., pp. 680-682, 1993.
Burkett et al., “Synthesis Of Hybrid Inorganic-Organic Mesoporous Silica By Co-Condensation Of Siloxane And Organosiloxane Precursors,”J. Chem. Soc. Chem. Commun., 1996, 1367-1368.
Hamada Yoshitaka
Nakagawa Hideo
Sasago Masaru
Yagihashi Fujio
Alston & Bird LLP
Ngo Ngan V.
Nguyen Thinh T
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Composition for forming porous film, porous film and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composition for forming porous film, porous film and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition for forming porous film, porous film and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3623626