Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-16
2005-08-16
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C528S010000
Reexamination Certificate
active
06930393
ABSTRACT:
The object of the invention is to provide a porous film having the dielectric constant of 2.2 or less and having practicable mechanical strength. This invention provides a porous film-forming composition comprising (A) and (B):(A) 100 parts by weight of a hydrolyzable silicon compound and/or a product resulting from hydrolysis condensation of silicon compound expressed by following formula (1):in-line-formulae description="In-line Formulae" end="lead"?R1aSiZ14-a (1)in-line-formulae description="In-line Formulae" end="tail"? wherein Z1denotes a hydrolyzable group; R1denotes a substituted or non-substituted monovalent hydrocarbon group; and a denotes an integer of 0 to 3; and(B) 0.1 to 20 parts by weight of a cross-linking agent comprising at least one cyclic oligomer which can generate silanol group(s) by heating and which is expressed by following formula (3):in-line-formulae description="In-line Formulae" end="lead"?{R31(H)SiO}d{R32(Z3)SiO}e (3)in-line-formulae description="In-line Formulae" end="tail"? wherein R31and R32each denotes a substituted or non-substituted monovalent hydrocarbon group; Z3denotes a group which can generate silanol by heating; and each d and e denotes an integer of 0 to 10, and a sum of d and e is greater than or equal to three.
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Asano Takeshi
Hamada Yoshitaka
Nakagawa Hideo
Sasago Masaru
Alston & Bird LLP
Andújar Leonardo
Matsushita Electric - Industrial Co., Ltd.
Shin-Etsu Chemical Co. , Ltd.
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