Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-06-05
2008-12-30
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S642000, C438S622000
Reexamination Certificate
active
07470975
ABSTRACT:
It is an object of the present invention to provide, with good yields, a composition for forming an insulation film which allows obtaining an insulation film for a semiconductor device having a low dielectric constant, excellent stress resistance and excellent crack resistance; an insulation film for a semiconductor device formed from the composition for forming an insulation film; and a high quality and highly reliable semiconductor device fabricated using the insulation film for a semiconductor device. This composition for forming an insulation film comprises a polymer of which the main chain is a chain portion which substantially contains only carbon, silicon and hydrogen, and which contains nitrogen in portions other than the main chain. It is preferable that nitrogen exists as a constituent represented by Formula 1 in the polymer.
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Imada Tadahiro
Kobayashi Yasushi
Nakata Yoshihiro
Dang Phuc T
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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