Composition for forming insulation film, insulation film for...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S642000, C438S622000

Reexamination Certificate

active

07470975

ABSTRACT:
It is an object of the present invention to provide, with good yields, a composition for forming an insulation film which allows obtaining an insulation film for a semiconductor device having a low dielectric constant, excellent stress resistance and excellent crack resistance; an insulation film for a semiconductor device formed from the composition for forming an insulation film; and a high quality and highly reliable semiconductor device fabricated using the insulation film for a semiconductor device. This composition for forming an insulation film comprises a polymer of which the main chain is a chain portion which substantially contains only carbon, silicon and hydrogen, and which contains nitrogen in portions other than the main chain. It is preferable that nitrogen exists as a constituent represented by Formula 1 in the polymer.

REFERENCES:
patent: 4914500 (1990-04-01), Liu et al.
patent: 6423651 (2002-07-01), Nakano et al.
patent: 2003/0181537 (2003-09-01), Kirchmeyer et al.
patent: 2004/0237384 (2004-12-01), Orr
patent: 2005/0181633 (2005-08-01), Hochberg et al.
patent: 2007/0190800 (2007-08-01), Rantala
patent: 2644648 (1997-08-01), None
patent: 2003-297819 (2003-10-01), None
patent: 2005-513777 (2005-05-01), None

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