Composition for forming gate insulating layer of organic...

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Reexamination Certificate

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C428S041500, C257S040000, C257SE51001

Reexamination Certificate

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08057870

ABSTRACT:
The present invention relates to a composition for forming a gate insulating layer of an organic thin film transistor comprising polyarylate, and an organic thin film transistor comprising a gate insulating layer, which is formed using the composition, in contact with an organic semiconductor channel.

REFERENCES:
patent: 5177173 (1993-01-01), Iwakiri et al.
patent: 5639558 (1997-06-01), Tatsumi et al.
patent: 6611096 (2003-08-01), McCormick et al.
patent: 6611299 (2003-08-01), Fujii et al.
patent: 7005674 (2006-02-01), Lee et al.
patent: 2006/0124925 (2006-06-01), Kondo et al.

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