Composition for forming dielectric layer, MIM capacitor and...

Details Composition for forming dielectric layer, MIM capacitor and... Composition for forming dielectric layer, MIM capacitor and...

2007-09-18

2007-09-18

Anthony, Joseph D. (Department: 1714)

Compositions

Barrier layer device compositions

Group vi element-containing

C252S06230R, C438S240000, C438S238000, C438S239000, C438S778000, C438S780000, C438S781000, C438S785000, C438S787000, C438S790000, C257S296000, C257S306000

Reexamination Certificate

active

11150231

ABSTRACT:
To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production.A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

REFERENCES:
patent: 5165076 (1992-11-01), Tsuboyama et al.
patent: 6126743 (2000-10-01), Saegusa et al.
patent: 6586513 (2003-07-01), Goto et al.
patent: 6808670 (2004-10-01), Kawabe et al.
patent: 6908960 (2005-06-01), Takaya et al.
patent: 2002/0132898 (2002-09-01), Takaya et al.
patent: 2003/0005723 (2003-01-01), Kawabe et al.
patent: 2003/0207135 (2003-11-01), Goto et al.
patent: 2005/0130446 (2005-06-01), Takaya et al.
patent: 2005/0154110 (2005-07-01), Takaya et al.
patent: 2005/0276934 (2005-12-01), Fukui et al.
patent: 2003-7135 (2003-01-01), None
patent: 2003-11270 (2003-01-01), None

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