Composition for forming anti-reflective coating for use in...

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Reexamination Certificate

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Details

C427S098200, C427S098400, C525S103000, C525S523000, C525S529000, C428S413000, C428S500000

Reexamination Certificate

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07425347

ABSTRACT:
The present invention relates to a composition for forming anti-reflective coating for use in a lithography process in manufacture of a semiconductor device which comprises polymer (A) having a weight average molecular weight of 5,000 or less, and a polymer (B) having a weight average molecular weight of 20,000 or more. The composition provides an anti-reflective coating for use in a lithography which is excellent in step coverage on a substrate with an irregular surface, such as hole or trench, has a high anti-reflection effect, causes no intermixing with a resist layer, provides an excellent resist pattern, and has a higher dry etching rate compared with the resist layer.

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Taylor et al., “Methacrylate Resists and Antireflective Coatings for 193 nm Lithography,” Part of the SPIE Conference on Advances in Resist Technology and Processing XVI Santa Clara, California, SPIE, vol. 3678 pp. 174-185, Mar. 1999.
Meador et al., “Recent Progress in 193 nm Antireflective Coatings,” Part of the SPIE Conference on Advances in Resist Technology and Processing XVI Santa Clara, California, SPIE, vol. 3678 pp. 800-809, Mar. 1999.
Lynch et al., “Properties and Performance of Near UV Reflectivity Control Layers,” SPIE, vol. 2195, pp. 225-229, 1994.

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