Composition for film formation and material for insulating...

Details Composition for film formation and material for insulating... Composition for film formation and material for insulating...

2005-02-08

2005-02-08

Peng, Kuo-Liang (Department: 1712)

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

C525S474000, C525S393000

Reexamination Certificate

active

06852370

ABSTRACT:
A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly(arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

REFERENCES:
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patent: 0 543 597 (1993-05-01), None
patent: 1 122 746 (2001-08-01), None
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patent: WO 0011096 (2000-03-01), None
patent: WO 0119889 (2001-03-01), None

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