Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – From silicon reactant having at least one...
Reexamination Certificate
2000-06-02
2002-04-23
Dawson, Robert (Department: 1712)
Synthetic resins or natural rubbers -- part of the class 520 ser
Synthetic resins
From silicon reactant having at least one...
C106S287130, C106S287160, C106S287100, C524S272000, C524S357000, C524S363000, C528S012000, C528S017000, C528S020000, C528S039000
Reexamination Certificate
active
06376634
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a composition for film formation and a material for insulating film formation using the composition. More particularly, the present invention relates to a composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability.
BACKGROUND OF THE INVENTION
Silica (SiO
2
) films formed by vacuum processes such as CVD method have hitherto been used frequently as interlayer insulating films in semiconductor devices and other devices. In recent years, an insulating coating film which comprises a tetraalkoxysilane hydrolyzate as the main component and is called an SOG (spin on glass) film has come to be used for the purpose of forming a more even interlayer insulating film. Furthermore, as a result of the trend toward higher degree of integration in semiconductor devices and the like, an interlayer insulating film has been developed which comprises a polyorganosiloxane as the main component, has a low dielectric constant, and is called an organic SOG film.
However, with further progress in the degree of integration or multilayer film formation in semiconductor devices and the like, better electrical insulation between conductors has come to be required and, hence, an interlayer insulating film material of low dielectric constant has come to be desired which gives a coating film having excellent uniformity, lower dielectric constant, low leakage current and excellent storage stability.
JP-A-6-181201 (the term “JP-A” as used herein means an “unexamined published Japanese patent application”) discloses as an interlayer insulating film material a coating composition for forming an insulating film having a lower dielectric constant. This coating composition is intended to provide an insulating film for semiconductor devices which has low water absorption and excellent cracking resistance. This coating composition for insulating film formation comprises as the main component an oligomer having a number average molecular weight of 500 or higher obtained by condensation polymerizing an organometallic compound containing at least one element selected from titanium, zirconium, niobium and tantalum with an organosilicon compound having at least one alkoxy group in the molecule.
WO 96/00758 discloses a silica-type coating material for insulating film formation which is used for forming an interlayer insulating film in producing a multilayered printed circuit board. This coating material comprises an alkoxysilane, a metal alkoxide other than silanes, an organic solvent, etc., can be applied thickly, and gives a coating film having excellent resistance to an oxygen plasma.
Furthermore, JP-A-3-20377 discloses a coating solution for oxide film formation which is useful for surface planarization, interlayer insulation, etc., in producing electronic parts and the like. This coating solution for oxide film formation is intended to be provided as a homogeneous coating solution which is free from the generation of gel particles and from which a satisfactory oxide film having no cracks can be obtained even in the case where it has undergone high temperature curing or treatment with a prescribed plasma. This coating solution for oxide film formation is obtained by hydrolyzing and polymerizing a prescribed silane compound and a prescribed chelate compound in the presence of an organic solvent.
However, none of these conventional compositions for film formation give a coating film having excellent uniformity and have a satisfactory balance in low dielectric constant, low leakage current, storage stability and other properties.
Accordingly, one object of the present invention is to provide a film-forming composition that overcomes the problems described above.
Another object of the present invention is to provide a material for an interlayer insulating film which, when used for forming an interlayer insulating film in the production of semiconductor devices and the like, has an excellent balance in uniformity, low dielectric constant, low leakage current, storage stability and other properties of a coating film.
The present invention provides a composition for film formation which comprises:
(A) a product of hydrolysis and condensation (hereinafter referred to simply as a “product of hydrolysis and condensation”) obtained by hydrolyzing and condensing at least one compound selected from the group consisting of
(A-1) compounds represented by the following formula (1):
R
1
a
Si(OR
2
)
4−a
(1)
wherein R
1
represents hydrogen atom, fluorine atom or a monovalent organic group; R
2
represents a monovalent organic group; and a represents an integer of 0 to 2, and
(A-2) compounds represented by the following formula (2):
R
3
b
(R
4
O)
3−b
Si—(R
7
)
d
—Si(OR
5
)
3−c
R
6
c
(2)
wherein R
3
, R
4
, R
5
and R
6
may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each represent a number of 0 to 2; R
7
represents oxygen atom or a group represented by —(CH
2
)
n
—, wherein n is 1 to 6; and d is 0 or 1; and
(B) a compound represented by the following formula (3):
R
8
O(CHCH
3
CH
2
O)
e
R
9
(3)
wherein R
8
and R
9
each independently represent hydrogen atom or a monovalent organic group selected from alkyl groups having 1 to 4 carbon atoms and CH
3
CO—, provided that one of R
8
and R
9
is not hydrogen atom; and e represents an integer of 1 or 2.
The invention further provides a material for insulating film formation, which comprises the composition.
DETAILED DESCRIPTION OF THE INVENTION
The present invention is described in detail below.
Ingredient (A)
Ingredients (A-1)
Examples of the monovalent organic groups represented by R
1
and R
2
in the formula (1) include alkyl group, aryl group, allyl group and glycidyl group. In the formula (1), R
1
is preferably a monovalent organic group, especially alkyl group or phenyl group.
The alkyl group preferably has 1 to 5 carbon atoms, and examples thereof include methyl, ethyl, propyl and butyl. Those alkyl groups may be linear or branched, and may be ones in which one or more of the hydrogen atoms have been replaced with, for example, fluorine atoms.
In the formula (1), examples of the aryl group include phenyl, naphthyl, methylphenyl, ethylphenyl, chlorophenyl, bromophenyl and fluorophenyl.
Specific examples of the compounds represented by the formula (1) include: trimethoxysilane, triethoxysilane, tri-n-propoxysilane, triisopropoxysilane, tri-n-butoxysilane, tri-sec-butoxysilane, tri-tert-butoxysilane, triphenoxysilane, fluorotrimethoxysilane, fluorotriethoxysilane, fluorotri-n-propoxysilane, fluorotriisopropoxysilane, fluorotri-n-butoxysilane, fluorotri-sec-butoxysilane, fluorotri-tert-butoxysilane, fluorotriphenoxysilane, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetraisopropoxysilane tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxysilane and tetraphenoxysilane; methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, methyltri-n-butoxysilane, methyltri-sec-butoxysilane, methyltri-tert-butoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltri-iso-propoxysilane, ethyltri-n-butoxysilane, ethyltri-sec-butoxysilane, ethyltri-tert-butoxysilane, ethyltriphenoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri-n-propoxysilane, vinyltri-iso-propoxysilane, vinyltri-n-butoxysilane, vinyltri-sec-butoxysilane, vinyltri-tert-butoxysilane, vinyltriphenoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltri-n-propoxysilane, n-propyltri-iso-propoxysilane, n-propyltin-n-butoxysilane, n-propyltri-sec-butoxysilane, n-propyltri-tert-butoxysilane, n-propyltriphenoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, isopropyltri-n-propoxysi
Ebisawa Masahiko
Hakamatsuka Satoko
Inoue Yasutake
Kakuta Mayumi
Nishikawa Michinori
Dawson Robert
JSR Corporation
Zimmer Marc S.
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