Composition for etching double metal layer, method of...

Details Composition for etching double metal layer, method of... Composition for etching double metal layer, method of...

2005-11-28

2010-02-16

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000

Reexamination Certificate

active

07662725

ABSTRACT:
A composition for etching a double metal layer, a method of fabricating an array substrate using the composition, and a method of forming a double metal line using the composition are provided. The composition includes about 63.5% to about 64.5% by weight of a phosphoric acid; about 8% to about 9% by weight of a nitric acid; about 8% to about 12% by weight of an acetic acid; and an anionic additive.

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patent: 2001/0034139 (2001-10-01), Song et al.
patent: 2004/0198882 (2004-10-01), Fujita
patent: 2004/0219459 (2004-11-01), Hirabayash
patent: 2005/0042530 (2005-02-01), Kato et al.
patent: 10-2000-0021735 (2000-04-01), None
patent: 10-2002-0014581 (2002-02-01), None

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