Composition for cleaning semiconductor device

Details Composition for cleaning semiconductor device Composition for cleaning semiconductor device

2004-12-22

2008-08-12

Webb, Gregory E (Department: 1796)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C134S003000, C510S175000

Reexamination Certificate

active

07410902

ABSTRACT:
A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protective film-forming test; a semiconductor device comprising a protective film containing a sulfur atom on a surface of an aluminum wire, wherein sulfur atom is contained within a region of at least 5 nm in its thickness direction from the surface of the protective film; and method for manufacturing a semiconductor device, comprising the step of contacting an aluminum wire of the semiconductor device with the sulfur-containing detergent composition as defined above, thereby forming a sulfur-containing protective film on the surface of the aluminum wire. The semiconductor device can be suitably used in the manufacture of electronic parts such as LCD, memory and CPU. Especially, the semiconductor device is suitably used in the manufacture of a highly integrated semiconductor with advanced scale-down.

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Full English translation of Japanese Patent Laid-Open No. Showa 58-132935.

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