Composition double heterojunction transistor

Details Composition double heterojunction transistor Composition double heterojunction transistor

1986-07-09

1988-09-13

James, Andrew J.

357 16, 357 4, 357 56, 357 60, 357 61, 357 15, 357 63, H01L 2972, H01L 2904, H01L 2954, H01L 2912

Patent

active

047713267

ABSTRACT:
A heterojunction transistor has an acceptor doped superlattice base of sub-micron thickness, a composite emitter with a donor concentration adjacent the base, with a wider bandgap energy than the base, and with a low recombination velocity to minimize minority carrier diffusion and to set the divergence of emitter and base carrier velocities, and a collector configured like the emitter, permitting control and optimization of the cut-in voltage. The method for making the transistor includes forming the base, emitter, and collector by non-compensated, non-planar wafer processing techniques.

REFERENCES:
patent: 3211970 (1965-10-01), Christian
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4302763 (1981-11-01), Ohuchi et al.
patent: 4482910 (1984-11-01), Nishizawa et al.
patent: 4661829 (1987-04-01), Bean et al.

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