Coating processes – Electrical product produced – Photoelectric
Patent
1982-12-06
1984-05-08
Hoffman, James R.
Coating processes
Electrical product produced
Photoelectric
427160, H01L 3100
Patent
active
044474709
ABSTRACT:
Methods for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520.degree. C. and 625.degree. C. is employed over a processing time t of between approximately 1/4 and 4 hours. The thickness A of the grown HgCdTe (15) is a linear function of processing time t. The mole fraction x of cadmium in the HgCdTe (15) is a linear function of temperature T and an exponential function of the mole fraction y of mercury in the source (3). The lower the relative amount of mercury in the source (3), the greater the relative amount of mercury in the end product (15), and vice versa. Any crystal plane and any axial orientation of the CdTe substrate (5) can be used without affecting the rate of growth of the HgCdTe (15), the single crystal nature of the HgCdTe (15), or the mirror-like finish of its surface. At least 90% of the transition between the CdTe substrate (5) and the grown HgCdTe layer (15) occurs within the first 20% of the HgCdTe layer (15); for distances greater than this away from the substrate (5), the HgCdTe (15) exhibits a substantially uniform x.
REFERENCES:
patent: 3218204 (1965-11-01), Ruehrwein
patent: 3472685 (1969-10-01), Marfaing et al.
patent: 3619283 (1971-11-01), Carpenter et al.
patent: 3658582 (1972-04-01), Coker et al.
patent: 3664866 (1972-05-01), Manasevit
patent: 3779803 (1973-12-01), Lee et al.
patent: 3884788 (1975-05-01), Maciolek et al.
patent: 3902924 (1975-09-01), Maciolek et al.
Tufte et al., "Growth and Properties of Hg.sub.1-x Cd.sub.x Te Epitaxial Layers", J. Appl. Physics, vol. 40, No. 11, Oct. 1969, pp. 4559-4568.
Becla et al., "A Modified Approach to Isothermal Growth of Ultra-High Quality HgCdTe for Infrared Applications", J. Electrochem. Soc., vol. 128, No. 5, May 1981, pp. 1171-1173.
Becla et al., "Optimization of Isothermal Growth of HgCdTe Layers", J. Electrochem. Soc., vol. 129, No. 5, May 1982, pp. 1103-1105.
Cohen-Solal et al., "Epitaxial (CdHg)Te Infrared Photovoltaic Detectors", Appl. Phys. Ltrs., vol. 19, No. 10, Nov. 15, 1971, pp. 436-438.
Svob et al., "Influence of the Mercury Vapor Pressure on the Isothermal Growth of HgTe Over CdTe", J. Appl. Phys., vol. 46, No. 10, Oct. 1975, pp. 4251-4258.
McClelland et al., "A Technique for Producing Epitaxial Films on Reusable Substrates", 37 Appl. Phys. Ltrs., 560-562, Sep. 15, 1980.
Ford Aerospace & Communications Corporation
Hoffman James R.
Radlo Edward J.
Sanborn Robert D.
LandOfFree
Composition control of CSVPE HgCdTe does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composition control of CSVPE HgCdTe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition control of CSVPE HgCdTe will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1602563