Stock material or miscellaneous articles – All metal or with adjacent metals – Composite; i.e. – plural – adjacent – spatially distinct metal...
Patent
1983-09-26
1984-12-11
O'Keefe, Veronica
Stock material or miscellaneous articles
All metal or with adjacent metals
Composite; i.e., plural, adjacent, spatially distinct metal...
148174, 428657, H01L 900, H01L 736
Patent
active
044878133
ABSTRACT:
Method for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520.degree. C. and 625.degree. C. is employed over a processing time t of between approximately 1/4 and 4 hours. The thickness A of the grown HgCdTe (15) is a linear function of processing time t. The mole fraction x of cadmium in the HgCdTe (15) is a linear function of temperature T and an exponential function of the mole fraction y of mercury in the source (3). The lower the relative amount of mercury in the source (3), the greater the relative amount of mercury in the end product (15), and vice versa. Any crystal plane and any axial orientation of the CdTe substrate (5) can be used without affecting the rate of growth of the HgCdTe (15), the single crystal nature of the HgCdTe (15), or the mirror-like finish of its surface. At least 90% of the transition between the CdTe substrate (5) and the grown HgCdTe layer (15) occurs within the first 20% of the HgCdTe layer (15); for distances greater than this away from the substrate (5), the HgCdTe (15) exhibits a substantially uniform x.
REFERENCES:
patent: 3619283 (1971-11-01), Carpenter et al.
C. C. Wang et al., J. Electro. Chem. Soc., vol. 127, No. 1, pp. 175-179, Jan. 1980.
Vohl et al., J. Electronic Materials, vol. 7, No. 5, pp. 659-678, 1978.
Ford Aerospace & Communications Corporation
O'Keefe Veronica
Radlo Edward J.
Sanborn Robert D.
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