Composition containing a cross-linkable matrix precursor and...

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C521S098000, C521S134000, C521S139000

Reexamination Certificate

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06887910

ABSTRACT:
A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tgof greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

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