Composition comprising an oxidizing and complexing compound

Compositions – Etching or brightening compositions

Reexamination Certificate

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Details

C252S079400, C438S745000, C438S754000

Reexamination Certificate

active

10451230

ABSTRACT:
The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate

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International Search Report in WO 02/051961 A3.
Kirk-Othmer Encyclopedia of Chemical Technology (4thEd.), vol. 13, p. 965.
Kem, et al.; Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology; RCA Review, Jun. 1970; pp. 187-205.
Mertens, et al.; Wafer Cleaning: A Quantifiable Process Step; Proc. of the 8thInternational Symposium on Silicon Materials Science and Technology; PV 98-1 (1998).
Mertens, et al.; Proc of the 5thInternational Symp. on Cleaning Technology in Semiconductor Manufacturing: PV 97-35 (1997).
Kirk-Othmer Encyclopedia of Chemical Technology (4thEd.), vol. 13, p. 965, no date avail.
Kern, et al.; Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology; RCA Review, Jun. 1970; pp. 187-205.
Mertens, et al.; Wafer Cleaning: A Quantifiable Process Step; Proc. of the 8thInternational Symposium on Silicon Materials Science and Technology; PV 98-1 (1998).
Mertens, et al.; Proc of the 5thInternational Symp. on Cleaning Technology in Semiconductor Manufacturing; PV 97-35 (1997).

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