Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1981-08-26
1983-08-30
Brown, J. Travis
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430296, 430313, 430323, 430919, 430927, 156643, G03C 152
Patent
active
044017456
ABSTRACT:
A composition for ultra-fine pattern formation comprising at least one of acrylic and/or vinyl ketone polymers as the major component and an effective amount of an aromatic azide compound and, in another embodiment, further comprising an effective amount of an organic compound having a vinyl group, and a process for ultra-fine pattern formation therewith. In the process, a required area of a film formed from the composition is irradiated with a corpuscular beam or with electromagnetic wave radiation. The aromatic azide compound or a mixture thereof with the aromatic compound having a vinyl group only in the unexposed areas is subjected to a deactivation treatment within the film, and the unexposed areas of the film are removed with a gas plasma to form an ultra-fine pattern. The composition is suitable for use in the ultra-fine pattern formation of a resist for transistors, integrated circuits (IC), large scale integrated circuits (LSI) or the like in the semiconductor industry.
REFERENCES:
patent: 3752671 (1973-08-01), Singh
patent: 3850646 (1974-11-01), Wagner et al.
patent: 3950173 (1976-04-01), Ross et al.
patent: 4018937 (1977-04-01), Levine et al.
patent: 4232110 (1980-11-01), Taylor
patent: 4241165 (1980-12-01), Hughes et al.
patent: 4278753 (1981-07-01), Lewis et al.
patent: 4287294 (1981-09-01), Rubner et al.
Taylor, X-ray Resist Materials, Solid State Technology, vol. 23, pp. 73-80, May 1980.
Kanai Wataru
Nakane Hisashi
Tsuda Minoru
Brown J. Travis
Tokyo Ohka Kogyo Co. Ltd.
LandOfFree
Composition and process for ultra-fine pattern formation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composition and process for ultra-fine pattern formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition and process for ultra-fine pattern formation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-906339