Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-03-17
1998-05-26
Jones, Deborah
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
51309, 106 3, 1566361, 1566451, B24D 334
Patent
active
057563985
ABSTRACT:
An aqueous slurry is provided which is useful for the chemical-mechanical polishing of substrates containing titanium comprising: water, submicron abrasive particles, an oxidizing agent, and a combination of complexing agents comprising a phthalate compound and a compound which is a di- or tri-carboxylic acid with at least one hydroxyl group in an alpha position relative to one of the carboxyl groups.
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"Pattern Density Effects in Tungsten CMP", Rutten et al., Proc. VMIC 1995, pp. 491-497, 1995.
Cook Lee Melbourne
Sethuraman Anantha R.
Wang Jiun-Fang
Benson Kenneth A.
Jones Deborah
Rodel Inc.
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